semihow rev.a0,may 2014 HGA40N120FV v ces = 1200 v i c = 40 a v ce(sat) typ = 2.0 v absolute maximum ratings HGA40N120FV 1200v field stop trench igbt symbol parameter value units v ces collector - emitter voltage 1200 v i c collector current ? continuous (t c = 25 ) 64 a collector current ? continuous (t c = 100 ) 40 a i cm collector current ? pulsed (note 1) 160 a i f diode forward current ? continuous (t c = 100 ) 20 a i fm diode maximum forward current 60 a v ges gate - emitter voltage 20 v p d power dissipation ? continuous (t c = 25 ) 400 w power dissipation ? continuous (t c = 100 ) 160 w t j, t stg operating and storage temperature range -55 to +150 t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 thermal resistance characteristics symbol parameter typ. max. units r jc (igbt) junction -to - case -- 0.31 /w r jc (diode) junction -to - case -- 1.11 r ja junction -to - ambient -- 40 march 2015 notes: 1. pulse width limited by max junction temperature ? 1200v field stop trench technology ? low saturation voltage ? high switching frequency ? very soft, fast recovery anti - parallel diode features to - 247 g c e ? welding converters ? uninterruptible power supply ? general purpose inverters application
semihow rev.a0,may 2014 HGA40N120FV electrical characteristics of the igbt t c =25 c unless otherwise specified symbol parameter test conditions min typ max units v ge( th ) gate - emitter threshold voltage v ce = v ge , i c = 1.5 ma 4.0 -- 7.0 v v ce(sat) collector - emitter saturation voltage v ge = 15 v, i c = 40 a t c = 25 -- -- 2.0 2.5 2.6 -- v t c = 125 on characteristics bv ces collector - emitter breakdown voltage v ge = 0 v, i c = 250 ua 1200 -- -- v i ces zero gate voltage collector current v ce = 1200 v, v ge = 0 v -- -- 1 ma i ges gate - emitter leakage current v ge = 20 v, v ce = 0 v -- -- 250 ? off characteristics c ies input capacitance v ce = 30 v, v ge = 0 v, f = 1.0 mhz -- 9150 -- ? c oes output capacitance -- 295 -- ? c res reverse transfer capacitance -- 76 -- ? dynamic characteristics t d(on) turn - on time v cc = 600 v, i c = 40 a, r g = 10 ?, v ge = 15v inductive load, t c = 25 -- 50 -- ? t r turn - on rise time -- 65 -- ? t d(off) turn - off delay time -- 295 -- ? t f turn - off fall time -- 85 -- ? e on turn - on switching loss -- 2.3 -- mj e off turn - off switching loss -- 2.2 -- mj e ts total switching loss -- 4.5 mj t d(on) turn - on time v cc = 600 v, i c = 40 a, r g = 10 ?, v ge = 15v inductive load, t c = 125 -- 90 -- ? t r turn - on rise time -- 70 -- ? t d(off) turn - off delay time -- 415 -- ? t f turn - off fall time -- 165 -- ? e on turn - on switching loss -- 2.65 -- mj e off turn - off switching loss -- 3.2 -- mj e ts total switching loss -- 5.85 -- mj q g total gate charge v cc = 600v, i c = 40 a, v ge = 15 v -- 225 -- nc q ge gate - emitter charge -- 55 -- nc q gc gate - collector charge -- 90 -- nc switching characteristics
semihow rev.a0,may 2014 HGA40N120FV electrical characteristics of the diode v fm diode forward voltage i f = 40 a t c = 25 -- -- 2.2 2.0 -- -- v t c = 125 t rr diode reverse recovery time i f = 40 a, di / dt = 200 a/ s t c = 25 -- -- 200 325 300 -- ns t c = 125 i rr diode peak reverse recovery current t c = 25 -- -- 23 43 35 -- a t c = 125 q rr diode reverse recovery charge t c = 25 -- -- 2500 7000 -- -- nc t c = 125
semihow rev.a0,may 2014 HGA40N120FV figure 1. typical output characteristics figure 2. typical saturation voltage characteristics figure 3. saturation voltage vs. case temperature at variant current level figure 4. load current vs. frequency figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge igbt characteristics
semihow rev.a0,may 2014 HGA40N120FV figure 7. capacitance characteristics figure 8. turn - on characteristics vs. gate resistance figure 9. turn - off characteristics vs. gate resistance figure 10. switching loss vs. gate resistance figure 11. turn - on characteristics vs. collector current figure 12. turn - off characteristics vs. collector current igbt characteristics
semihow rev.a0,may 2014 HGA40N120FV figure 13. switching loss vs. collector current figure 14. gate charge characteristics figure 15. soa characteristics figure 16. turn - off soa figure 17. transient thermal impedance of igbt igbt characteristics
semihow rev.a0,may 2014 HGA40N120FV figure 18. forward characteristics figure 19. reverse recovery current figure 20. stored charge figure 21. reverse recovery time diode characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 -2 10 -1 10 0 10 1 10 2 t j =25 o c t j =125 o c forward current, i f [a] forward voltage, v f [v]
semihow rev.a0,may 2014 HGA40N120FV package dimension to - 247
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